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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3088 DESCRIPTION *With TO-3PN package *High breakdown voltage (VCBO800V) *Fast switching speed *Wide area of safe operation APPLICATIONS *500V/4A Switching Regulator Applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 60 150 -55~150 PW300s, Duty Cycle10% CONDITIONS Open emitter Open base Open collector VALUE 800 500 7 4 8 1.5 2.5 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE -2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ;RBE= IC=1mA ;IE=0 IE=1mA ;IC=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.3A ; VCE=5V IC=1.5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.3A ; VCE=10V 15 8 MIN 500 800 7 2SC3088 TYP. MAX UNIT V V V 1.0 1.5 10 10 50 V V A A 40 18 pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=2A ;IB1=-IB2=0.4 A RL=100,VCC=200V 1.0 3.0 1.0 s s s hFE-1 classifications L 15-30 M 20-40 N 30-50 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3088 Fig.2 outline dimensions 3 |
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